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| MMBT5550LT1G, MMBT5551LT1G High Voltage Transistors NPN Silicon Features http://onsemi.com COLLECTOR 3 1 BASE 2 EMITTER * These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS Rating Collector -Emitter Voltage MMBT5550 MMBT5551 MMBT5550 MMBT5551 Symbol VCEO Value 140 160 160 180 6.0 600 > 8000 > 400 Unit Vdc Collector -Base Voltage VCBO Vdc 1 2 3 MARKING DIAGRAM Emitter -Base Voltage Collector Current - Continuous Electrostatic Discharge Human Body Model Machine Model VEBO IC ESD Vdc mAdc V SOT-23 (TO-236) CASE 318 STYLE 6 x1x M G G 1 THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR- 5 Board (Note 1) @TA = 25C Derate Above 25C Thermal Resistance, Junction-to-Ambient Total Device Dissipation Alumina Substrate (Note 2) @TA = 25C Derate Above 25C Thermal Resistance, Junction-to-Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 556 300 2.4 417 -55 to +150 Unit mW mW/C C/W mW mW/C C/W C RqJA PD x1x = Device Code M1F = MMBT5550LT G1 = MMBT5551LT M = Date Code* G = Pb-Free Package (Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon manufacturing location. RqJA TJ, Tstg ORDERING INFORMATION Device MMBT5550LT1G MMBT5551LT1G MMBT5551LT3G Package Shipping SOT-23 3,000 / Tape & Reel (Pb-Free) SOT-23 3,000 / Tape & Reel (Pb-Free) SOT-23 10,000/Tape & Reel (Pb-Free) Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. FR-5 = 1.0 0.75 0.062 in. 2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina. For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. (c) Semiconductor Components Industries, LLC, 2010 September, 2010 - Rev. 9 1 Publication Order Number: MMBT5550LT1/D MMBT5550LT1G, MMBT5551LT1G ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic OFF CHARACTERISTICS Collector -Emitter Breakdown Voltage (Note 3) (IC = 1.0 mAdc, IB = 0) Collector -Base Breakdown Voltage (IC = 100 mAdc, IE = 0) Emitter -Base Breakdown Voltage (IE = 10 mAdc, IC = 0) Collector Cutoff Current (VCB = 100 Vdc, IE = 0) (VCB = 120 Vdc, IE = 0) (VCB = 100 Vdc, IE = 0, TA = 100C) (VCB = 120 Vdc, IE = 0, TA = 100C) Emitter Cutoff Current (VEB = 4.0 Vdc, IC = 0) ON CHARACTERISTICS DC Current Gain (IC = 1.0 mAdc, VCE = 5.0 Vdc) (IC = 10 mAdc, VCE = 5.0 Vdc) (IC = 50 mAdc, VCE = 5.0 Vdc) Collector -Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 50 mAdc, IB = 5.0 mAdc) Base -Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 50 mAdc, IB = 5.0 mAdc) Collector Emitter Cut-off (VCB = 10 V) (VCB = 75 V) 3. Pulse Test: Pulse Width = 300 ms, Duty Cycle = 2.0%. MMBT5550 MMBT5551 MMBT5550 MMBT5551 MMBT5550 MMBT5551 Both Types MMBT5550 MMBT5551 Both Types MMBT5550 MMBT5551 Both Types hFE 60 80 60 80 20 30 - - - - - - - - - - 250 250 - - 0.15 0.25 0.20 1.0 1.2 1.0 50 100 - MMBT5550 MMBT5551 MMBT5550 MMBT5551 MMBT5550 MMBT5551 MMBT5550 MMBT5551 V(BR)CEO 140 160 160 180 6.0 - - - - - - - - - - 100 50 100 50 50 Vdc Symbol Min Max Unit V(BR)CBO Vdc V(BR)EBO ICBO Vdc nAdc mAdc nAdc IEBO VCE(sat) Vdc VBE(sat) Vdc ICES nA http://onsemi.com 2 MMBT5550LT1G, MMBT5551LT1G 500 300 200 h FE, DC CURRENT GAIN 100 - 55C 50 30 20 10 7.0 5.0 0.1 TJ = 125C 25C VCE = 1.0 V VCE = 5.0 V 0.2 0.3 0.5 0.7 1.0 3.0 2.0 5.0 7.0 IC, COLLECTOR CURRENT (mA) 10 20 30 50 70 100 Figure 1. DC Current Gain VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1.0 IB, BASE CURRENT (mA) 2.0 5.0 10 20 50 IC = 1.0 mA 10 mA 30 mA 100 mA Figure 2. Collector Saturation Region 101 VCE = 30 V IC, COLLECTOR CURRENT ( A) 100 10-1 10-2 10-3 10-4 10-5 0.4 TJ = 125C VCE(sat), Coll-Emitt Saturation Voltage (V) 0.30 IC/IB = 10 0.25 150C 0.20 0.15 25C 0.10 -55C 0.05 0 0.0001 IC = ICES 75C REVERSE 25C FORWARD 0.3 0.2 0.1 0 0.1 0.2 0.3 0.4 VBE, BASE-EMITTER VOLTAGE (VOLTS) 0.5 0.6 0.001 0.01 IC, COLLECTOR CURRENT (A) 0.1 Figure 3. Collector Cut-Off Region Figure 4. VCE(sat) http://onsemi.com 3 MMBT5550LT1G, MMBT5551LT1G 1.10 VBE(sat), Base-Emitt Saturation Voltage (V) 1.00 0.90 0.80 0.70 0.60 0.50 0.40 0.30 0.20 0.0001 0.001 0.01 IC, COLLECTOR CURRENT (A) 0.1 150C 25C IC/IB = 10 -55C VBE(on), Base-Emitter Voltage (V) 1.10 1.00 0.90 0.80 0.70 0.60 0.50 0.40 0.30 0.20 0.0001 0.001 0.01 IC, COLLECTOR CURRENT (A) 0.1 150C 25C VCE = 10 V -55C Figure 5. VBE(sat) 2.5 V, TEMPERATURE COEFFICIENT (mV/ C) 2.0 1.5 C, CAPACITANCE (pF) 1.0 0.5 0 - 0.5 - 1.0 - 1.5 - 2.0 - 2.5 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 IC, COLLECTOR CURRENT (mA) 50 100 qVB for VBE(sat) qVC for VCE(sat) TJ = - 55C to +135C 100 70 50 30 20 10 7.0 5.0 3.0 2.0 1.0 0.2 Figure 6. VBE(on) TJ = 25C Cibo Cobo 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 VR, REVERSE VOLTAGE (VOLTS) Figure 7. Temperature Coefficients Figure 8. Capacitances 10.2 V Vin 10 ms INPUT PULSE tr, tf 10 ns DUTY CYCLE = 1.0% VBB - 8.8 V 100 0.25 mF RB 5.1 k Vin 100 1N914 VCC 30 V 3.0 k RC Vout Values Shown are for IC @ 10 mA Figure 9. Switching Time Test Circuit http://onsemi.com 4 MMBT5550LT1G, MMBT5551LT1G 1000 fT, Current Gain Bandwidth Product (Mhz) IC, COLLECTOR CURRENT (A) VCE = 1 V TA = 25C 100 1 10 mS 0.1 1.0 S 0.01 10 1 0.1 100 1.0 10 IC, COLLECTOR CURRENT (mA) 1000 0.001 1.0 100 10 VCE, COLLECTOR EMITTER VOLTAGE (V) 1000 Figure 10. Current Gain Bandwidth Product 100 70 50 30 C, CAPACITANCE (pF) t, TIME (ns) 20 10 7.0 5.0 3.0 2.0 1.0 0.2 Cibo Cobo 1000 TJ = 25C 500 300 200 100 50 30 20 10 0.2 0.3 0.5 Figure 11. Safe Operating Area IC/IB = 10 TJ = 25C tr @ VCC = 120 V tr @ VCC = 30 V td @ VEB(off) = 1.0 V VCC = 120 V 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 1.0 VR, REVERSE VOLTAGE (VOLTS) 20 30 2.0 3.0 5.0 10 IC, COLLECTOR CURRENT (mA) 50 100 200 Figure 12. Capacitances Figure 13. Turn-On Time http://onsemi.com 5 MMBT5550LT1G, MMBT5551LT1G PACKAGE DIMENSIONS SOT-23 (TO-236) CASE 318-08 ISSUE AN D SEE VIEW C 3 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. 318-01 THRU -07 AND -09 OBSOLETE, NEW STANDARD 318-08. MILLIMETERS NOM MAX 1.00 1.11 0.06 0.10 0.44 0.50 0.13 0.18 2.90 3.04 1.30 1.40 1.90 2.04 0.20 0.30 0.54 0.69 2.40 2.64 INCHES NOM 0.040 0.002 0.018 0.005 0.114 0.051 0.075 0.008 0.021 0.094 E 1 2 HE c e b q 0.25 A A1 L L1 VIEW C DIM A A1 b c D E e L L1 HE MIN 0.89 0.01 0.37 0.09 2.80 1.20 1.78 0.10 0.35 2.10 MIN 0.035 0.001 0.015 0.003 0.110 0.047 0.070 0.004 0.014 0.083 MAX 0.044 0.004 0.020 0.007 0.120 0.055 0.081 0.012 0.029 0.104 STYLE 6: PIN 1. BASE 2. EMITTER 3. COLLECTOR SOLDERING FOOTPRINT* 0.95 0.037 0.95 0.037 2.0 0.079 0.9 0.035 SCALE 10:1 0.8 0.031 mm inches *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800-282-9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81-3-5773-3850 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative http://onsemi.com 6 MMBT5550LT1/D |
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